FQD1N80TM
Manufacturer:
On Semiconductor
Mfr.Part #:
FQD1N80TM
Datasheet:
Description:
MOSFETs DPAK-3 SMD/SMT N-Channel number of channels:1 2.5 W 800 V Continuous Drain Current (ID):1 A 7.2 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 800 V |
| Length | 6.6 mm |
| Width | 6.1 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 20 Ω |
| Height | 2.3 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 1 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 2.5 W |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 5 V |
| Number of Channels | 1 |
| Input capacitance | 195 pF |
| Continuous Drain Current (ID) | 1 A |
| Rds On Max | 20 Ω |
| Drain to Source Voltage (Vdss) | 800 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 10 ns |
| Turn-Off Delay Time | 15 ns |
| Element Configuration | Single |
| Fall Time | 25 ns |
| Rise Time | 25 ns |
| Gate Charge | 7.2 nC |
| Drain to Source Resistance | 20 Ω |
| Nominal Vgs | 5 V |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 800 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 3 V |
Stock: 1446
Distributors
pcbx
pcbxUnit Price$0.79509
Ext.Price$0.79509
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.79509 | $0.79509 |
| 10 | $0.51894 | $5.18940 |
| 25 | $0.46045 | $11.51125 |
| 50 | $0.40855 | $20.42750 |
| 100 | $0.36249 | $36.24900 |
| 300 | $0.34362 | $103.08600 |
| 500 | $0.32573 | $162.86500 |
| 1000 | $0.29580 | $295.80000 |
| 3000 | $0.28179 | $845.37000 |
| 5000 | $0.26845 | $1342.25000 |